Semiconductor discrete device . detail specification for type cs139 silicon p - channel mos enhancement mode field - effect transistor 半导体分立器件. cs139型硅p沟道mos增强型场效应晶体管详细规范
Semiconductor discrete device . detail specification for type cs6760 and cs6762 silicon n - channel enhacement mode field - effect transistor 半导体分立器件. cs6760和cs6762型硅n沟道增强型场效应晶体管详细规范
Semiconductor discrete device . detail specification for type cs 6768 and cs 6770 silicon n channel enhancement mode field effect transistor 半导体分立器件. cs6768和cs6770型硅n沟道增强型场效应晶体管详细规范
增强: strengthen; enhance; boost; ...型: mould; model场效应: field effect晶体管: transistor; crystal valve增强型场效应晶体管集成电路: enhancement mode fet integrated circuit增强型结式场效应晶体管: enhancement mode junction fet结型场效应晶体管: jfef; jfet junction type field effect transistor; junction field effect transistor; junction type field effect transistorn 沟道结型场效应晶体管: n channel junction fet垂向结型场效应晶体管: vertical junction fet大功率v型场效应晶体管: power v-type field effect transistor沟道结型场效应晶体管: n channel junction fet耗尽型场效应晶体管: dependent mode field effect transistor; depletion mode fet; depletion mode field effect transistor; depletion type fet; dfet; normally on fet接合型场效应晶体管: jfet junction type field effect transistor结面型场效应晶体管: junction field-effect transistor面结型场效应晶体管: jfet; junction field effect tra istor; junction field effect transistor; junction field-effect transistor增强型金属氧化物半导体场效应晶体管: emosfet; enhancement mos增强型肖特基势垒场效应晶体管: enhancement type schottky barrier fet; esbt场效应晶体管: dmosfet dmos; double diffused mos fet dmos; fet field effect transistor; field effect tra istor; field effect transistor (fet); field-effect transistor双极结型场效应晶体管工艺: bipolar junction fet technology肖脱基势结型场效应晶体管: schottky barrier gate field effect transistor薄膜场效应晶体管: tffet; thin film fet场效应晶体管沟道: fet channel场效应晶体管线路: field effect transistor circuit场效应晶体管栅压: gate voltage场效应晶体管阵列: fet array