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光刻技术的英文

发音:   用"光刻技术"造句

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  1. Intensity distribution in photoresist is analyzed during ldw exposure process in terms of the improved theoretical model and the method of selecting the optimal exposure is described . results of ray - tracing using zemax that is optical design software agree well with the calculated results of theoretical model and l dw experimental results verify the accuracy of the model . therefore this improved model is important significant for directing ldw research
    本文完善了激光直写光刻理论,分析了直写曝光中胶层内光场的分布,探讨了最佳曝光量的选择方案,利用zemax软件进行光线追迹的结果和理论模拟十分相近,实验结果验证了理论模型的正确性,该理论模型对激光直写光刻技术研究具有重要指导意义。
  2. The lithography is an important device for the microelectronics manufacturing , it is one of the key technologies to drive the ic manufacturing forward and it is widely used in the fields such as electronic encapsulation , photo - electricity equipment , detector , mems equipment , display and so on
    21世纪,微电子技术仍然是信息产业的主要技术支撑之一,光刻机是微电子器件制造业的重要工具。光刻技术一直是推动集成电路( ic )制造业向前发展的关键技术之一。广泛应用于电子封装,光电设备,探测器, mems设备,显示器等领域。
  3. It has broad application prospect in the following fields such as microelectronics , photoelectronic devices , large screen flat panel display , field emitter array , acoustic surface wave device , photon crystal , light waveguide array , holographic honeycomb lens and micro - optical element array , micro - structure manufacture , fabrication of large area grating and grid of high resolution , photoresist performance testing , profile measurement and metrology , etc . the paper only involves the primary research of interferometric lithography
    在微电子、光电子器件、大屏幕平板显示器、场发射器阵列、表面声波器件、光子晶体、光波导阵列、全息透镜和微光学元件阵列、微结构制造,高分辨、大面积光栅和网格制造,在抗蚀剂性能测试、面形测量和计量等领域,干涉光刻技术都具有广阔的应用前景。
  4. Extreme ultraviolet lithography ( euvl ) represents one of the promising technologies for supporting integrated circuit ( 1c ) industry ' s lithography needs during the first decade of the 21st century . this technology builds on conventional optical lithography experience and infrastructure , uses 11 - to 14 - nm photon illumination , and is expected to support multiple technology generation from 65 nm to 35 nm
    极紫外投影光刻( euvl , extremeultravioletlithography )技术作为下一代光刻技术中最佳候选技术,建立于可见/紫外光学光刻的诸多关键单元技术基础之上,工作波长为11 14nm ,适用于制造特征尺寸为65 35nm的数代超大规模集成电路,预计在2006年将成为主流光刻技术。
  5. The development status and trend of micro - electronics in china and others countries and the important influence of micro - electronics in the increase of world economy are discussed generally in this paper , and the research and development of laser lithography technology and equipment are summarized . the realistic significance , importance and feasibility of researching a new style of magnetic levitation ( maglev ) precision stage are narrated
    论文系统地综述了国内外微电子技术的发展概况、发展趋势以及微电子产业在世界经济增长中具有的重大影响,概述了光刻技术和光刻设备的研究与发展状况,叙述了当前磁悬浮技术的研究及应用水平,阐明了研制新型磁悬浮精密定位平台的现实意义、重要性和可行性。

相关词汇

其他语言

相邻词汇

  1. "光刻法的"英文
  2. "光刻干工艺"英文
  3. "光刻工艺"英文
  4. "光刻机"英文
  5. "光刻极限"英文
  6. "光刻胶"英文
  7. "光刻胶剥离"英文
  8. "光刻胶层图像形成"英文
  9. "光刻胶断面图"英文
  10. "光刻胶附着"英文
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